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5. Enhancement of critical temperature of LaBa>2>Cu>3>O>y> thin films by ...
15 sep 2008 · In this work, we prepared La123 thin films by conventional pulsed laser deposition (PLD) method and novel low temperature growth (LTG) technique ...
Although it is well known that LaBa2Cu3Oy (La123) superconductor has a possibility for the highest Tc among REBa2Cu3Oy (RE123) materials, it is hard to obtain a high Tc since solid solutions with low-Tc are easily formed. In this work, we prepared La123 thin films by conventional pulsed laser deposition (PLD) method and novel low temperature growth (LTG) technique and we compared Tc of the La123 thin films. As a result, La123 thin films grown at a relative low temperature by using LTG technique showed higher Tc than those of films grown by PLD method. From an evaluation of orthorhombicity by using in-plane X-ray diffraction system, the orthorhombicity became larger with decreasing the substrate temperature and Tc of LTG-La123 thin films also increased up to 83 K. Those facts indicate that the formation of low-Tc solid solutions is suppressed by low temperature growth.
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LA123 Datasheet. Part #: CLA1230000BBCG. Datasheet: 103Kb/3P. Manufacturer: Vishay Siliconix. Description: Wire Bondable Thin Film Resistor Arrays.
LA123 Datasheet. Part #: CLA1230000BBCG. Datasheet: 103Kb/3P. Manufacturer: Vishay Siliconix. Description: Wire Bondable Thin Film Resistor Arrays. 209 Results. Part #: CLA1230000BBEG. Datasheet: 103Kb/3P. Manufacturer: Vishay Siliconix.
8. Enhancement of critical temperature of LaBa 2 Cu 3 O y thin films by novel ...
Although it is well known that LaBa 2 Cu 3 O y (La123) superconductor has a possibility for the highest T c among REBa 2 Cu 3 O y (RE123) materials, ...
Although it is well known that LaBa 2Cu 3O y (La123) superconductor has a possibility for the highest Tc among REBa 2Cu 3O y (RE123) materials, it is hard to obtain a high Tc since solid solutions with low- Tc are easily formed. In this work, we prepared La123 thin films by conventional pulsed laser deposition (PLD) method and novel low temperature growth (LTG) technique and we compared Tc of the La123 thin films. As a result, La123 thin films grown at a relative low temperature by using LTG technique showed higher Tc than those of films grown by PLD method. From an evaluation of orthorhombicity by using in-plane X-ray diffraction system, the orthorhombicity became larger with decreasing the substrate temperature and Tc of LTG-La123 thin films also increased up to 83 K. Those facts indicate that the formation of low- Tc solid solutions is suppressed by low temperature growth.